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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055A/D Complementary Silicon High-Power Transistors . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955. * Current-Gain -- Bandwidth-Product @ IC = 1.0 Adc fT = 0.8 MHz (Min) - NPN = 2.2 MHz (Min) - PNP * Safe Operating Area -- Rated to 60 V and 120 V, Respectively *MAXIMUM RATINGS Rating 2N3055A MJ15015* MJ2955A PNP MJ15016* *Motorola Preferred Device NPN PD(AV), AVERAGE POWER DISSIPATION (W) IIIIIIIIIIIIIIIIIIIIIII III I III I I I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III II I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I III I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III I I III I I I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I III I I III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII Symbol VCEO VCBO VCEV 2N3055A MJ2955A 60 MJ15015 MJ15016 120 200 200 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage 100 100 Collector-Emitter Voltage Base Reversed Biased Emitter-Base Voltage VEBO IC IB 7.0 15 Collector Current -- Continuous Base Current 7.0 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 115 0.65 180 1.03 Watts W/_C TJ, Tstg - 65 to + 200 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS CASE 1-07 TO-204AA (TO-3) _C THERMAL CHARACTERISTICS Characteristic Symbol RJC Max Max Unit Thermal Resistance, Junction to Case 1.52 0.98 _C/W * Indicates JEDEC Registered Data. (2N3055A) 200 150 MJ15015 MJ15016 100 50 2N3055A MJ2955A 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIII I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIII III II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N3055A MJ15015 MJ2955A MJ15016 (1) Pulse Test: Pulse Width = 300 s, Duty Cycle * Indicates JEDEC Registered Data. (2N3055A) *SWITCHING CHARACTERISTICS (2N3055A only) *DYNAMIC CHARACTERISTICS *ON CHARACTERISTICS (1) *SECOND BREAKDOWN OFF CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) 2 RESISTIVE LOAD Fall Time Storage Time Rise Time Delay Time Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) (IC = 15 Adc, IB = 7.0 Adc) DC Current Gain (IC = 4.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VEB = 7.0 Vdc, IC = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) *Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VBE(off) = 0 Vdc) (VCE = 60 Vdc, VBE(off) = 0 Vdc) *Collector-Emitter Sustaining Voltage (IC = 200 mAdc, IB = 0) Characteristic Second Breakdown Collector Current with Base Forward Biased (t = 0.5 s non-repetitive) 2N3055A, MJ2955A (VCE = 60 Vdc) MJ15015, MJ15016 v 2%. (VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 Adc, 2% tp = 25 s Duty Cycle 2N3055A, MJ2955A MJ15015, MJ15016 2N3055A, MJ2955A MJ15015, MJ15016 2N3055A, MJ2955A MJ15015, MJ15016 2N3055A, MJ2955A MJ15015, MJ15016 2N3055A, MJ2955A MJ15015, MJ15016 2N3055A, MJ15015 MJ2955A, MJ15016 v Motorola Bipolar Power Transistor Device Data VCEO(sus) VCE(sat) VBE(on) Symbol ICEO IEBO ICEV ICEV Cob hFE IS/b fT td ts tr tf 1.95 3.0 Min 60 120 0.8 2.2 0.7 10 20 5.0 60 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Max 600 6.0 3.0 4.0 0.5 6.0 18 1.8 1.1 3.0 5.0 5.0 0.2 5.0 1.0 0.7 0.1 70 70 -- -- -- -- -- 30 6.0 mAdc mAdc mAdc mAdc MHz Unit Vdc Vdc Adc Vdc pF s s s s -- 2N3055A MJ15015 MJ2955A MJ15016 200 100 hFE , DC CURRENT GAIN 70 50 30 20 VCE = 4.0 V 10 7 5 3 2 25C - 55C TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.8 TJ = 25C 2.4 2 1.6 1.2 0.8 0.4 0 0.005 0.01 0.02 IC = 1 A 4A 8A 0.2 0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMP) 7 10 15 0.05 0.1 0.2 0.5 IB, BASE CURRENT (AMP) 1 2 5 Figure 2. DC Current Gain f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) 3.5 TC = 25C 3 V, VOLTAGE (VOLTS) 2.5 2 1.5 1 0.5 0 0.2 0.3 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 4 V VCE(sat) @ IC/IB = 10 0.5 0.7 1 2 3 5 7 10 20 10 Figure 3. Collector Saturation Region 5.0 MJ2955A MJ15016 2.0 2N3055A MJ15015 1.0 0.1 0.2 0.3 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS) Figure 4. "On" Voltages Figure 5. Current-Gain -- Bandwidth Product 10 7 5 VCC + 30 V t, TIME ( s) 7.5 30 1N6073 -5 V SCOPE 3 2 VCC = 30 V IC/IB = 10 TJ = 25C tr 25 s +13 V 0 -11 V tr, tf 10 ns DUTY CYCLE = 1.0% 1 0.7 0.5 0.3 0.2 0.1 td 0.2 0.3 5 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 7 10 15 Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) Figure 7. Turn-On Time Motorola Bipolar Power Transistor Device Data 3 2N3055A MJ15015 MJ2955A MJ15016 10 7 5 C, CAPACITANCE (pF) 3 t, TIME ( s) 2 0.1 0.7 0.5 0.3 0.2 0.1 VCC = 30 IC/IB = 10 IB1 = IB2 TJ = 25C 0.2 0.3 2 0.5 0.7 1 3 5 IC, COLLECTOR CURRENT (AMPS) 7 10 15 tf ts 400 TJ = 25C 200 Cib 2N3055A MJ15015 MJ2955A MJ15016 100 50 30 20 1.0 2.0 Cob 5.0 10 20 50 100 200 VR, REVERSE VOLTAGE (VOLTS) 500 1000 Figure 8. Turn-Off Times Figure 9. Capacitances COLLECTOR CUT-OFF REGION NPN 10,000 VCE = 30 V IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 1000 100 TJ = 150C 10 100C 1.0 0.1 0.01 + 0.2 REVERSE 25C + 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) - 0.5 0.001 - 0.2 - 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) + 0.5 IC = ICES FORWARD 100 10 1.0 100C 0.1 REVERSE 0.01 25C IC = ICES FORWARD TJ = 150C 1000 VCE = 30 V PNP Figure 10. 2N3055A, MJ15015 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) 30 s 10 100 s 1 ms 5 100 ms 2 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT dc 20 Figure 11. MJ2955A, MJ15016 0.1 ms 10 5.0 1.0 ms 2.0 1.0 0.5 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 15 100 ms dc 120 1 10 20 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 0.2 30 20 60 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Forward Bias Safe Operating Area 2N3055A, MJ2955A There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa4 Figure 13. Forward Bias Safe Operating Area MJ15015, MJ15016 tion than the curves indicate. The data of Figures 12 and 13 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. Motorola Bipolar Power Transistor Device Data 2N3055A MJ15015 MJ2955A MJ15016 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 2N3055A MJ15015 MJ2955A MJ15016 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N3055A/D* 2N3055A/D |
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